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DMG1013T
P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
Features and Benefits
V (BR)DSS
-20V
R DS(on)
700m Ω @ V GS = -4.5V
900m Ω @ V GS = -2.5V
1300m ? @ V GS = -1.8V
I D
T A = 25 ° C
-460mA
-420mA
-350mA
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Low On-Resistance
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
ESD Protected Up To 3kV
Lead Free By Design/RoHS Compliant (Note 1)
"Green" Device (Note 2)
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Qualified to AEC-Q101 standards for High Reliability
Description and Applications
Mechanical Data
This new generation MOSFET has been designed to minimize the on-
state resistance (R DS(on) ) and yet maintain superior switching
performance, making it ideal for high efficiency power management
applications.
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Case: SOT523
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
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DC-DC Converters
Load switch
Power management functions
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Terminals: Finish ? Matte Tin annealed over Alloy 42
leadframe. Solderable per MIL-STD-202, Method 208
Terminal Connections: See Diagram
Weight: 0.002 grams (approximate)
Drain
SOT523
D
Gate
Gate
Protection
Diode
Source
G
S
ESD PROTECTED TO 3kV
Top View
Equivalent Circuit
Top View
Ordering Information (Note 3)
Part Number
DMG1013T-7
Case
SOT523
Packaging
3000/Tape & Reel
Notes:
1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. No purposely added lead. Halogen and Antimony free.
2. Diodes Inc's "Green" policy can be found on our website at http://www.diodes.com.
3. For packaging details, go to our website at http://www.diodes.com.
Marking Information
PA1 = Product Type Marking Code
PA1
YM
YM = Date Code Marking
Y = Year (ex: W = 2009)
M = Month (ex: 9 = September)
Date Code Key
Year
Code
2009
W
2010
X
2011
Y
2012
Z
2013
A
2014
B
2015
C
2015
C
2015
C
Month
Code
Jan
1
Feb
2
Mar
3
Apr
4
May
5
Jun
6
Jul
7
Aug
8
Sep
9
Oct
O
Nov
N
Dec
D
DMG1013T
Document number: DS31784 Rev. 5 - 2
1 of 6
www.diodes.com
March 2012
? Diodes Incorporated
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